Session: 3.3 - Open Source CFD

Paper Number: 158016

158016 - Computational Fluid Dynamics Investigations of Slurry Flow Behavior and Replenishment Patterns During Chemical Mechanical Planarization 

Abstract: 

With the continuous reduction in the size of integrated circuits in semiconductor chips, there is a growing interest in improving the yield and performance of semiconductor devices. Chemical Mechanical Planarization (CMP) plays a critical role in facilitating the stacking of multilayer structures for advanced devices, such as FinFETs and 3D NAND, by ensuring a flat and uniform wafer surface. The CMP process relies on the interplay of consumables, including the wafer, pad, slurry, and conditioner, to effectively remove surface irregularities. Among these, the design of the pad surface, as well as the center-to-center distance and rotation speed of the pad and wafer, are crucial factors in enhancing the distribution and maintenance of slurry during polishing. Recent Computational Fluid Dynamics (CFD) simulations of slurry flow have significantly advanced the understanding of the role of the CMP pad and how to improve the process performance. CFD simulations have proven effective in increasing material removal rates and refining pad designs, leading to higher surface quality and extended pad lifespans. In this study, the pad-wafer center-to-center distances of 10, 15, and 20 cm and rotation speeds of 60, 90, and 120 rpm of the pad and wafer were simulated using CFD. The results demonstrated that a rotation speed of 120 rpm combined with a 15 cm pad-wafer center-to-center distance enables faster and more effective slurry spreading and replacement.

Keywords: CMP, CFD Simulation, Slurry Replenishment, Pad

Presenting Author: Atefeh Sadri Mofakham Clarkson University

Presenting Author Biography: